Raid A. Ismail; Khalid Z. Al - Ta'ai; Manaf R. Ismail
Abstract
Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction ...
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Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , Bi , Ag , and Al were deposited on the sensitive area of the detectors ( donor side ) . On the base of the transmission and absorption phenomena of the deposited films , peak response data of these detectors that conventionally at near IR ( 850-900 nm ) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition .
